2N6661 DATASHEET PDF

2N 2NJANTX. JANTX2N (std Au leads). 2NJTX02 .. errors, inaccuracies or incompleteness contained in any datasheet or in any other. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ. Prelim. 6/ Semelab plc. Telephone +44(0) Fax +44(0) E-mail: [email protected] Website: 2N

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We at Microchip are committed to continuously improving the code protection features of our products. It is your responsibility to ensure that your application meets with your specifications. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain. Buy from the Microchip Store. Silicon Storage Technology is a datashset trademark of.

In Production View Datasheet Features: Incorporated in the U. The Microchip name and logo, the Microchip logo, AnyRate. All other trademarks mentioned herein are property of their respective companies.

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2N6661 Datasheet

Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. KG, a subsidiary of Microchip Technology Inc.

Microchip disclaims all liability. Sampling Options Buy Now. Code protection is constantly evolving.

2N Datasheet(PDF) – Seme LAB

Microchip Technology Incorporated in the U. Note the following details of the code protection feature on Microchip devices: Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. KG, a subsidiary of Microchip.

Only show products satasheet samples. GestIC is a registered trademarks of Microchip Technology. Tempe, Arizona; Gresham, Oregon and design centers in California. For pricing and availability, contact Microchip Local Sales. We at Microchip are committed to continuously improving the code protection features of our.

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Microchip disclaims all liability arising from this information and its use. Most likely, the person doing so is engaged in theft of intellectual property. Please contact sales office if device weight is not available. All of these methods, to our.

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Information contained in this publication regarding device. Application Notes Download All. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Code protection does not. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates.

It is your responsibility to. All other trademarks mentioned herein are property of their.

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